1. Which of the following mainly constitutes the output node capacitance?
A. Inter electrode capacitance
B. Stray capacitance
C. Junction Parasitic capacitance
D. All of the mentioned
2. The junction parasitic capacitance are produced due to ____________
A. Source diffusion regions
B. Gate diffusion regions
C. Drain diffusion region
D. All of the mentioned
3. The amount of parasitic capacitance at the output node is determined by __________
A. Concentration of the impurity-doped
B. Size of the total drain diffusion area
C. Charges stored in the capacitor
D. None of the mentioned
4. The dominant component of the total output capacitance in submicron technology is?
A. Drain diffusion capacitance
B. Gate oxide capacitance
C. Interconnect capacitance
D. Junction parasitic capacitance
5. Which of the following is the dominant component in input capacitance?
A. Gate diffusion capacitance
B. Gate parasitic capacitance
C. Gate oxide capacitance
D. All of the mentioned
6. The total load capacitance is calculated as the sum of __________
A. Drain capacitance in series with input capacitance
B. Drain capacitance + interconnect capacitance +input capacitance
C. Drain capacitance + interconnect capacitance – input capacitance
D. Drain capacitance in parallel with input capacitance
7. The interconnect capacitance is formed by __________
A. Area between the interconnect lines
B. Interconnect lines between the gates
C. Inter electrode capacitance of interconnect lines
D. None of the mentioned
8. The amount of gate oxide capacitance is determined by __________
A. Charges present on the gate
B. Polarity of the gate
C. Charges present on the substrate
D. Area of the gate
9. By what amount is Sidewall doping larger than substrate doping concentration.
A. 5
B. 2
C. 1
D. 10
10. Zero bias depletion capacitance per unit length at sidewall junctions is given by, (Cj is the zero bias depletion capacitance per unit area.
A. (√10).Cj.xj
B. (√5).Cj.xj
C. (√10).Cj.xj2
D. (√10).Cj.xj3