11. The typical value of capacitance in pF × 10-4/µm2 for gate to channel in λ based design is?
A. 1
B. 0.4
C. 0.2
D. 4
12. The active capacitance is also called as __________
A. Parasitic capacitance
B. Interconnect capacitance
C. Junction capacitance
D. Diffusion capacitance
13. The value of diffusion capacitance in pF x 10-4/µm2 in 2 µm design is?
A. 1.75
B. 4
C. 8
D. 16
14. The value of a standard unit of capacitance is?
A. 0.01pF
B. 0.0032pF
C. 0.0023pF
D. All of the mentioned
15. The standard unit of capacitance is defined as?
A. Capacitance of gate to channel of MOS transistor having W = L dimensions
B. Capacitance of gate to channel of n-MOS transistor having W = 3L dimensions
C. Capacitance of gate to channel of p-MOS transistor having 3W = L dimensions
D. Capacitance of gate to channel of n-MOS transistor having W = L dimensions and p-MOS having W=3L dimensions
16. The capacitances in MOSFET occurs due to _____________
A. Interconnects
B. Difference in Doping concentration
C. Difference in dopant materials
D. All of the mentioned
17. The parasitic capacitances found in MOSFET are ___________
A. Oxide related capacitances
B. Inter electrode capacitance
C. Electrolytic capacitance
D. All of the mentioned
18. The capacitance that exists between Gate and Bulk is called ___________
A. Oxide parasitic capacitance
B. Metal oxide capacitance
C. MOS capacitance
D. None of the mentioned
19. In Cut-off Mode, the capacitance Cgs will be equal to ___________
A. 2Cgd
B. 0
C. Cgb
D. All of the mentioned
20. In cut-off mode, the value of gate to substrate capacitance is equal to ___________
A. Cox .(W- L)
B. Cox W/ L
C. Cox* W*L
D. 0