VLSI

Device Modelling and Performance Estimation in VLSI MCQ Quiz – Objective Question with Answer for Device Modelling and Performance Estimation in VLSI

1. MESFETs are _______ modulation devices. A. channel area B. channel voltage C. channel current D. channel variation   2. Gallium arsenide has _____ regions of operation. A. two B. three C. four D. five   3. Drain to source current is due to A. flow of majority carriers from drain to source B. flow …

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VLSI GaAs Fabrication MCQ Quiz – Objective Question with Answer for GaAs Fabrication in VLSI

1. Gallium arsenide crystals are grown from A. boron oxide B. silicon oxide C. silicon nitride D. boron nitride   2. Wafers in GaAs fabrication are thermally unstable. A. true B. false   3. The sequence of the steps followed in the fabrication of GaAs is A. lapping B. polishing C. grinding D.All of the …

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VLSI MOSFET MCQ Quiz – Objective Question with Answer for VLSI MOSFET

1. The gallium arsenide field-effect transistor is ________ majority carrier device. A. bulk current insulation B. bulk current conduction C. bulk voltage insulation D. bulk voltage conduction   2. Method used for fabrication of GaAs FET is A. ion implantation B. disposition C. diffusion D. conduction   3. How many masking stages does fabrication of …

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VLSI MESFET MCQ Quiz – Objective Question with Answer for VLSI MESFET

1. The gallium arsenide field-effect transistor is ________ majority carrier device. A. bulk current insulation B. bulk current conduction C. bulk voltage insulation D. bulk voltage conduction   2. Method used for fabrication of GaAs FET is A. ion implantation B. disposition C. diffusion D. conduction   3. How many masking stages does fabrication of …

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VLSI Technology Development MCQ Quiz – Objective Question with Answer for Technology Development in VLSI

1. The GaAs fabrication has _________ gate geometry. A. less than one micron B. less than two micron C. more than one micron D. more than two micron   2. The GaAs structure has upto _______ metal. A. two-layer B. three-layer C. four-layer D. one-layer   3. Electron mobility of gallium arsenide is _______ that …

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Gallium (GA) Doping Process in VLSI MCQ Quiz – Objective Question with Answer for

1. Addition of impurities is essential for creating switching devices. A. true B. false   2. The behaviour of the switching element is decided by A. selection of impurity B. concentration density C. selection of impurity & concentration density D. none of the mentioned   3. ______ elements can act as either donors or acceptors. …

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Gallium Arsenide VLSI MCQ Quiz – Objective Question with Answer for Gallium Arsenide VLSI

1. Gallium arsenide has _______ electron mobility. A. high speed B. low speed C. smaller D. larger   2. Which technology has a semi-insulating substrate? A. silicon B. silicon nitride C. gallium oxide D. gallium arsenide   3. Gallium is produced as a byproduct of A. aluminium production process B. sulphur production process C. nitrogen …

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Submicron CMOS MCQ Quiz – Objective Question with Answer for VLSI Submicron CMOS

1. Submicron CMOS technology is A. faster B. slower C. large D. slow and large   2. In CMOS devices, which has slower performance? A. n-transistor B. p-transistor C. all of the mentioned D. none of the mentioned   3. As the channel length is scaled down, the influence of mobility A. increases B. decreases …

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Practical Aspects and Testability of VLSI MCQ Quiz – Objective Question with Answer Practical Aspects and Testability for

1. Reduction in power dissipation can be brought by A. increasing transistor area B. decreasing transistor area C. increasing transistor feature size D. decreasing transistor feature size   2. When does the longest delay occur in 8:1 inverters? A. during 1 to 0 transition B. during 0 to 1 transition C. during faster speed D. …

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