Gallium (GA) Doping Process in VLSI MCQ Quiz – Objective Question with Answer for

1. Addition of impurities is essential for creating switching devices.

A. true
B. false

Answer: A

It is necessary to introduce impurities into the semi-insulating GaAs to facilitate the creation of switching devices.


2. The behaviour of the switching element is decided by

A. selection of impurity
B. concentration density
C. selection of impurity & concentration density
D. none of the mentioned

Answer: C

The selection of the impurity and its concentration density determines the behavior of the switching element.


3. ______ elements can act as either donors or acceptors.

A. group II
B. group III
C. group IV
D. group V

Answer: C

Group IV elements such as silicon can act as either donor (on Ga sites) or as acceptors (on As sites).


4. Which element is smaller?

A. arsenic
B. gallium
C. silicon
D. aluminum

Answer: A

Arsenic is smaller than gallium and silicon. The covalent radius of Ga is 1.26 Armstrong unit whereas for As is 1.18 Armstrong unit.


5. ______ is used as the dopant for the formation of n-type material.

A. aluminum
B. arsenic
C. silicon
D. gallium

Answer: C

Group IV impurities tend to occupy gallium sites. Silicon is used as the dopant for the formation of n-type material.


6. Increase in positive charge ___________ the effective nuclear charge.

A. increases
B. decreases
C. exponentially increases
D. does not affect

Answer: A

An increase in the positive charge of the nucleus results in an increase in the effective nuclear charge thereby increasing the effective atomic radius.


7. ___________ is used for the formation of p-type material.

A. beryllium
B. magnesium
C. beryllium and magnesium
D. aluminum

Answer: C

Group II elements such as beryllium and magnesium can be used for the formation of p-type materials.


8. Which is the lightest p-type dopant?

A. beryllium
B. magnesium
C. silicon
D. arsenic

Answer: A

Beryllium is the lightest p-type dopant for GaAs, deep implantation of the dopant atoms can be accomplished with less lattice damage.


9. _______ influences the properties of GaAs field-effect transistor.

A. length dependency
B. structural dependency
C. material dependency
D. orientation dependency

Answer: D

Orientation dependency influences the properties of GaAs field-effect transistors. Factors like etching of the crystal, ion implantation, and passivation introduce the concept of orientation dependency.


10. The ion is steered ________ of the lattice.

A. up the open directions
B. down the open directions
C. up the closed directions
D. down the closed directions

Answer: B

When a high-energy ion enters a single crystal lattice, the ion is steered down the open directions of the lattice. This steering is called axial channelling.

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