81. How the ohmic contact is formed in a metal-semiconductor diode? (AL-Aluminium)
A. n+ diffusion in p-region near AL lead
B. p+ diffusion in p-region near AL lead
C. n+ diffusion in n-region near AL lead
D. p+ diffusion in n-region near AL lead
82. The flow of current in the Schottky barrier diode is due to
A. Majority and Minority carriers
B. Majority carriers
C. Minority carriers
D. None of the mentioned
83. Find the application areas, where the Schottky diode can be used?
A. Radio-frequency
B. Power rectifier
C. Clamping diode
D. All of the mentioned
84. Which of the following resistor is not used as an integrated resistor?
A. Poly gate resistor
B. Pinched resistor
C. Epitaxial resistor
D. Thin film resistor
85. Which of the following is not true about diffused resistors?
A. Limitation due to small range of resistance
B. Resistance depends upon surface geometry
C. Resistance depends on diffusion characteristics of the material
D. Diffused resistors are non-economical
86. Determine the formula for sheet resistance (Rs).
A. R×L×W
B. R×(L×ρ)/W
C. R×(W/L)
D. R×(W×ρ)/L
87. Consider a 52cm×52cm material of uniform resistivity 100Ωm and thickness of 3cm. Find the area and resistance of this sheet of material.
A. 16 m2, 1.923 Ω/square
B. 8112 cm2, 1.733 Ω/square
C. 156 cm2, 33.33 Ω/square
D. 901 cm2, 3.333 Ω/square
88. If a 25Ω diffused resistor is to be designed for an emitter resistor, determine the pattern in which it is fabricated?
A. 20mil long by 5mil wide
B. 25mil long by 1mil wide
C. 5mil long by 1mil wide
D. 16mil long by 4mil wide
89. The number of squares contained in the integrated resistor by diffused resistor method depends on the ratio of
A. ρ/t
B. ρ×L/W
C. W/L×t
D. L/W
90. Match the sheet resistance value for the following region in diffused resistor
1. Epitaxial Collector region | i. 200Ω/square |
2. p-type base region | ii. 1 to 10kΩ/square |
3. n-type emitter region | iii. 5Ω/square |
A. 1-I, 2-ii, 3-iii
B. 1-ii, 2-I, 3-iii
C. 1-iii, 2-I, 3-ii
D. 1-iii, 2-ii, 3-i
91. Which integrated resistor can achieve a high value of sheet resistance?
A. Pinched resistor
B. Epitaxial resistor
C. Thin film resistor
D. All of the mentioned
92. How pinched resistor can give resistance in the order of mega-ohm in a reasonably small area?
A. By increasing fabrication steps
B. By offering bulk resistance in n-region
C. By reducing the conduction path
D. By limiting the thickness of are
93. Which of the following is not used as a metallic film in the thin film resistor?
A. Nichrome (NiCr)
B. Tantalum (TA.
C. Stannic oxide (SnO2)
D. Silicon dioxide (SiO2)
94. Pick out the incorrect statement
A. Sheet resistance has smaller and lesser parasitic components
B. Value of the resistor can be easily adjusted after fabrication
C. Resistance in the range 100kΩ possible using nichrome resistors
D. Thin film resistors are more stable
95. The capacitance of the junction capacitor does not depend upon
A. Impurity concentration of p-type epitaxial layer
B. Impurity concentration of n-type epitaxial layer
C. Area of the junction
D. Voltage across the junction
96. Which is used as the dielectric layer in MOS Capacitor?
A. Silicon Nitride (Si3N4)
B. Aluminium oxide (Al2O3)
C. Tantalum oxide (Ta2O5)
D. All of the mentioned
97. Which is considered to be a serious disadvantage of the thin-film capacitors, when Al2O3is used as the dielectric?
A. Additional fabrication step required
B. It requires over-voltage protection
C. Higher dielectric constant value is required
D. All of the mentioned
98. In MOS capacitor, the preference in the dielectric layer is given to Silicon Nitride (Si3N4) because
A. It makes capacitor non-polar
B. It contains a small resistance
C. It offers less processing step
D. It reduces the failure mechanism
99. Why inductor is avoided in the Integrated Circuit component?
A. They provide many losses compared to other IC components
B. IC devices are essentially two dimensions
C. Device density of IC increases
D. Fabrication process of these components is complicated
100. Which circuit is used to replace inductors in IC components?
A. RC active network
B. PN-junction diode
C. LC active network
D. None of the mentioned