11. Latch-up is the generation of __________
A. low impedance path
B. high impedance path
C. low resistance path
D. high resistance path
12. Latch-up is brought about by BJTs __________
A. with positive feedback
B. with negative feedback
C. with no feedback
D. without BJT
13. Sudden transient in power can cause latch-up.
A. true
B. false
14. BJT gain should be ______ to avoid the latch-up effect.
A. increased
B. decreased
C. should be maintained constant
D. changed randomly
15. The BiCMOS are preferred over CMOS due to ______________
A. Switching speed is more compared to CMOS
B. Sensitivity is less with respect to the load capacitance
C. High current drive capability
D. All of the mentioned
16. The transistors used in BiCMOS are __________
A. BJT
B. MOSFET
C. Both BJT and MOSFETs
D. JFET
17. The high current driving capability of the BiCMOS is due to __________
A. NMOS in saturation mode
B. PMOS in saturation mode
C. CMOS
D. BJT
18. In BiCMOS inverter, the BJT used are __________
A. Only Npn BJT
B. Only Pnp BJT
C. Both NPN and PNP BJT
D. Multi emitter npn BJT
19. Which of the following is the drawback of the BiCMOS circuits?
A. Sensitivity is less load capacitance
B. Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C. Increased fabrication Complexity
D. All of the mentioned
20. The Bipolar Transistor is fabricated on __________
A. Same substrate of nMOS
B. N-well in p Substrate
C. P-well in n Substrate
D. Same substrate of pMOS