Latch-up in CMOS MCQ Quiz – Objective Question with Answer for Latch-up in CMOS MCQ

21. The n-well created for Bipolar Transistor in BiCMOS is used as __________

A. Substrate
B. Collector
C. Emitter
D. None of the mentioned

Answer: B

The created n-Well is used as the Collector region for BiCMOS.

22. The n-well collector is formed by __________

A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate

Answer: A

To make the doping concentration less than the emitter.

23. The collector contact region is doped with higher concentration of n-type impurities due to __________

A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between the collector region and contact
C. It reduces contact resistance
D. It can withstand high voltages as compared to the collector region

Answer: C

The collector contact region is doped with a higher concentration of n-type impurities reduces contact resistance.

24. What is the work of BJT in BiCMOS?

A. Current controlled Voltage source
B. Voltage controlled Current source
C. Current controlled current source
D. Voltage controlled current source

Answer: B

The Current Ic and Ie are controlled by the base-emitter bias voltage.

25. In BiCMOS, the analysis of the operation of BJT is well explained by ___________

A. RC Model
B. Emitter resister model
C. Ebers Moll Model
D. Hybrid model

Answer: C

In BiCMOS, the analysis of the operation of BJT is well explained by Ebers Moll Model.

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