A. exhaustive test pattern method
B. pseudo-exhaustive test pattern method
C. random test pattern method
D. pseudo-random test pattern method
Answer: D
Pseudo-random test pattern method has properties similar to a random pattern sequence but the sequence is repeatable.
32. Which method is used for external functional testing?
A. exhaustive test pattern method
B. pseudo-exhaustive test pattern method
C. random test pattern method
D. pseudo-random test pattern method
Answer: C
The random test pattern method is used for external functional testing of microprocessors as well as in ATPG software.
33. Flash memory is a non-volatile storage device in which data
A. can be erased physically
B. can be erased magnetically
C. can be erased electrically
D. cannot be erased
Answer: C
Flash memory is an electronic, solid-state, non-volatile memory storage device that can be electrically erased and reprogrammed.
34. NOR-type flash allows ______ to be read or written independently.
A. one machine cycle
B. one machine word
C. one machine sentence
D. one bit
Answer: B
NOR-type flash allows a single machine word that is one byte to be written to an erased location or read independently.
35. NAND type flash memories are used in
A. Memory cards
B. USB
C. Solid-state drivers
D. All of the mentioned
Answer: D
NAND-type flash memories operate primarily in memory cards, USB flash drives, and solid-state drivers.
36. Which is a comparatively slower device?
A. ROM
B. RAM
C. flash memory
D. SRAM
Answer: C
Flash memory has a fast read access time, but static RAM or ROM is comparatively faster than flash memory.
37. Floating gate transistor in flash memory has
A. two gates
B. one gate
C. two sources
D. two drains
Answer: A
A floating gate transistor in flash memory has two gates. These two gates are – the floating gate and the control gate.
A floating gate transistor (FGT) is a complementary metal-oxide-semiconductor (CMOS) technology capable of holding an electrical charge in a memory device that is used to store data.
38. In NOR-type flash memory, each cell has one end connected to
A. source
B. drain
C. gate
D. ground
Answer: D
In NOR-type flash memory, each cell has one end connected directly to the ground and the other end connected to the bit line.
39. In NOR-type flash memory, data is erased
A. bitwise
B. bytewise
C. blockwise
D. sentence wise
Answer: C
In NOR-type flash memory, the data can be erased only blockwise basis. all the cells in an erase segment must be erased together.
40. The transistors in NAND type flash are connected in
A. series
B. parallel
C. cascade
D. randomly
Answer: A
The NAND-type flash memory also uses floating-gate transistors and it is connected to form the NAND gate. The transistors are connected in series.
41. In NAND type flash, memory can be addressed bit-wise.
A. true
B. false
Answer: A
In NAND type flash, memory can be addressed by word, page, or even bitwise. In NOR-type flash, memory can be addressed by page and then a word.
42. The program erase cycle in flash memory is
A. finite
B. infinite
C. all of the mentioned
D. none of the mentioned
Answer: A
One disadvantage of flash memory is that it has a finite number of program-erase cycles. This limits the usage of flash memory.
43. NOR-type flash needs error-correcting code.
A. true
B. false
Answer: B
NOR flash memory is a storage device. It has a slow write speed compared to NAND-type flash. Typical NOR-type flash does not need error-correcting codes.
44. Which allows random access to read?
A. NOR-type flash
B. NAND type flash
C. all of the mentioned
D. none of the mentioned
Answer: A
The interface provided for reading and writing is different. NOR-type flash provides random access for reading whereas NAND-type flash provides page access.
45. Which has high storage capacity?
A. NOR-type flash
B. NAND type flash
C. all of the mentioned
D. none of the mentioned
Answer: B
NAND-type flash memory has different connections and interfaces when compared to NOR-type flash. Storage capacity is more in NAND-type flash than NOR-type flash memory.
