Metal Oxide Semiconductor (MOS) Transistor MCQ Quiz – Objective Question with Answer for Metal Oxide Semiconductor (MOS) Transistor

1. The conductivity of the pure silicon is raised by:

A. Introducing Dopants (impurities)
B. Increasing Pressure
C. Decreasing Temperature
D. Deformation of Lattice

Answer: A

By introducing Dopants free charge carriers increase further increasing the conductivity of silicon.

2. The n-type semiconductor has _______ as the majority carriers.

A. Holes
B. Negative ions
C. Electrons
D. Positive ions

Answer: C

In n-type semiconductors the majority of charge carriers present are electrons.

3. The majority of carriers of p-type semiconductors are:

A. Holes
B. Negative ions
C. Electrons
D. Positive ions

Answer: A

The majority of charge carriers of n-type semiconductors are holes.

4. The n-MOS transistor is made up of:
A. N-type source, n-type drain and p-type bulk
B. N-type source, p-type drain and p-type bulk
C. P-type source, n-type drain and n-type bulk
D. P-type source, p-type drain and n-type bulk

Answer: A

n-MOS Transistor consists of an n-type source, n-type drain, and p-type bulk.

7. The oxide layer formed in the MOSFET is:

A. Metal oxide
B. Silicon dioxide
C. Poly Silicon oxide
D. Oxides of Non-metals

Answer: B

Silicon Dioxide (Commonly called glass) is the insulating oxide layer formed in MOSFET.

5. The drain current is varied by:

A. Gate to source voltage
B. Gate current
C. Source Voltage
D. None of the mentioned

Answer: A

The Gate to Source voltage acts as input which varies the drain current.

6. The low voltage on the gate of p-MOSFET forms:

A. Channel of negative carriers
B. Channel is not formed
C. Channel is clipped
D. Channel of positive carriers

Answer: D

For a p-MOS low gate voltage forms a conducting channel of positive carriers.

7. The n-MOSFET is working as accumulation mode when:

A. Gate is applied with positive voltage
B. Gate is grounded
C. Gate is applied with negative voltage
D. Gate is connected to source

Answer: C

When the negative voltage is applied to the gate, there develops a presence of a negative charge on the gate. The mobile positively charged holes are attracted to the region beneath the gate. This explains the formation of the accumulation mode.

8. The current through the n-MOS transistor will flow when:

A. Vgs > Vtreshold, Vds=0
B. Vgd < Vtreshold, Vds=0
C. Vgs > Vtreshold, Vds>0
D. Vgd > Vtreshold, Vds<0

Answer: C

The current flows through the n-MOS transistor when Vgs > Vtreshold, Vds>0.

9. The p-MOS Transistor is said to be in Saturation mode when:

A. Vdsp > Vgsp – Vtp
B. Vgsp < Vdsp –Vtp
C. Vgsp > Vtp
D. Vdsp < Vgsp – Vtp

Answer: D

The pMOS transistor is in Saturation mode when Vdsp < Vgsp – Vtp and Vgsp < Vtp.

10. The Fermi potential of the p-type MOSFET is:

A. φfp = (kT/q)ln(ND/NA.
B. φfp = (kT/q)ln(NA/ND.
C. φfp = (kT/q)ln(NA/ni)
D. φfp = (kT/q)ln(ni/NA.

Answer: D

The Fermi potential of the p-type semiconductor is φfp = (kT/q)ln(ni/NA. where ni denotes the intrinsic carrier concentration of silicon, NA is acceptor concentration, ND is Donor Concentration.

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