Electrical Properties of MOS and BiCMOS Circuits MCQ Quiz – Objective Question with Answer for Electrical Properties of MOS and BiCMOS Circuits MCQ MCQ

91. The n-well collector is formed by __________

A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate

Answer: A

The n-well collector is formed by a lightly doped n-type epitaxial layer on the p-Substrate.

Step 1: First we choose a substrate as a base for fabrication.

Step 2:- For N- well, a P-type silicon substrate is selected.

Step 3 – Growing of Photoresist: At this stage to permit the selective etching, the SiO2 layer is subjected to the photolithography process.

 

92. The collector contact region is doped with higher concentration of n-type impurities due to __________

A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between the collector region and contact
C. It reduces contact resistance
D. It can withstand high voltages as compared to the collector region

Answer: C

The collector contact region is doped with a higher concentration of n-type impurities reduces contact resistance.

 

93. What is the work of BJT in BiCMOS?

A. Current controlled Voltage source
B. Voltage controlled Current source
C. Current controlled current source
D. Voltage controlled current source

Answer: B

  • The Current Ic and Ie are controlled by the base-emitter bias voltage.
  • BiCMOS is an evolved semiconductor technology that integrates two formerly separate semiconductor technologies those of the BJT and CMOS.
  • CMOS ensures low power dissipation, smaller noise margin, and higher packaging density, while BJT offers high switching speed and improved noise performance.

 

94. In BiCMOS, the analysis of the operation of BJT is well explained by ___________

A. RC Model
B. Emitter resister model
C. Ebers Moll Model
D. Hybrid model

Answer: C

In BiCMOS, the analysis of the operation of BJT is well explained by Ebers Moll Model.

The Ebers-Moll Model is an electronic representation of a transistor, either NPN or PNP, in any of the four fundamental configurations.

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