Electrical Properties of MOS and BiCMOS Circuits MCQ Quiz – Objective Question with Answer for Electrical Properties of MOS and BiCMOS Circuits MCQ MCQ

81. Latch-up is brought about by BJTs __________

A. with positive feedback
B. with negative feedback
C. with no feedback
D. without BJT

Answer: A

Latch-up occurs due to BJTs for silicon-controlled rectifiers with positive feedback and virtually short-circuit the power and ground rail.

 

82. Sudden transient in power can cause latch-up.

A. true
B. false

Answer: A

Sudden transient in power and ground buses are also among the reason which causes the latch-up effect.

 

83. BJT gain should be ______ to avoid the latch-up effect.

A. increased
B. decreased
C. should be maintained constant
D. changed randomly

Answer: B

BJT gain should be reduced by lowering the minority carrier lifetime through doping of the substrate to lower the latch-up effect.

 

84. The BiCMOS are preferred over CMOS due to __________

A. Switching speed is more compared to CMOS
B. Sensitivity is less with respect to the load capacitance
C. High current drive capability
D. All of the mentioned

Answer: D

The BiCMOS are preferred over CMOS due to

  • Switching speed is more compared to CMOS
  • Sensitivity is less with respect to the load capacitance
  • High current drive capability

BiCMOS combines the strengths of two different process technologies into a single chip:

Bipolar transistors offer high speed and gain, which are critical for high-frequency analog sections, whereas CMOS technology excels in constructing simple, low-power logic gates.

 

85. The transistors used in BiCMOS are __________

A. BJT
B. MOSFET
C. Both BJT and MOSFETs
D. JFET

Answer: C

BiCMOS is a combination of both MOSFET and BJT.

 

86. The high current driving capability of the BiCMOS is due to __________

A. NMOS in saturation mode
B. PMOS in saturation mode
C. CMOS
D. BJT

Answer: D

The high current driving capability of the BiCMOS is due to BJT

BiCMOS can be used for sample and hold applications as it provides high impedance inputs. This is also used in applications such as adders, mixers, ADC, and DAC.

 

87. In BiCMOS inverter, the BJT used are __________

A. Only Npn BJT
B. Only Pnp BJT
C. Both NPN and PNP BJT
D. Multi emitter npn BJT

Answer: A

NPN BJTs are used in BiCMOS inverter.

 

88. Which of the following is the drawback of the BiCMOS circuits?

A. Sensitivity is less load capacitance
B. Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C. Increased fabrication Complexity
D. All of the mentioned

Answer: C

  • The main drawbacks to BiCMOS are higher costs and longer fabrication cycle time.
  • The main disadvantage of BiCMOS is process complexity, which results in a high packaged chip cost.

 

89. The Bipolar Transistor is fabricated on __________

A. Same substrate of nMOS
B. N-well in p Substrate
C. P-well in n Substrate
D. Same substrate of pMOS

Answer: A

BiCMOS is fabricated on the same substrate as nMOS.

 

90. The n-well created for Bipolar Transistor in BiCMOS is used as __________

A. Substrate
B. Collector
C. Emitter
D. None of the mentioned

Answer: B

  • The n-well created for Bipolar Transistor in BiCMOS is used as a Collector.
  • CMOS can be obtained by integrating both NMOS and PMOS transistors over the same silicon wafer.
  • In N–well technology an n-type well is diffused on a p-type substrate whereas in P- well it is vice- verse.

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