MOS Transistor Theory MCQ Quiz – Objective Question with Answer for MOS Transistor Theory

21. The average power dissipated in resistive load n-MOS inverter is:

A. 0
B. VDD (VDD-VOL)/R
C. VDD (VDD-VOL)/2R
D. VDD (VDD-VIH)/2R

Answer: C

When the input voltage is equal to VOH on the other hand, both the driver MOSFET and the load resistor conduct a nonzero current. Since the output voltage, in this case, is equal to VOL

The DC power consumption of the inverter can be estimated as

VDD (VDD-VOL)/2R.

22. The depletion mode n-MOS as an active load is better than enhancement load n-MOS in:

A. Sharp VTC transition and better noise margins
B. Single power supply
C. Smaller overall layout area
D. All of the mentioned

Answer: D

The depletion-mode n-MOS as an active load is better than the enhancement load n-MOS in

Sharp VTC transition and better noise margins
Single power supply
Smaller overall layout area

The depletion-mode n-MOS transistor as load requires a single power supply, a smaller overall layout area, and a sharp VTC transition.

23. The enhancement mode n-MOS load inverter requires 2 different supply voltages to:

A. Keep load transistor in the cutoff region
B. Keep load transistor in the linear region
C. Keep load transistor in the saturation region
D. None of the mentioned

Answer: B

The enhancement mode n-MOS load inverter requires 2 different supply voltages to keep the load transistor in the linear region.

24. The CMOS inverter consists of:

A. Enhancement mode n-MOS transistor and depletion mode p-MOS transistor
B. Enhancement mode p-MOS transistor and depletion mode n-MOS transistor
C. Enhancement mode p-MOS transistor and enhancement mode p-MOS transistor
D. Enhancement mode p-MOS transistor and enhancement mode n-MOS transistor

Answer: D

The CMOS inverter consists of enhancement mode P-MOS and enhancement mode n-MOS.

25. In the CMOS inverter the output voltage is measured across:

A. Drain of n-MOS transistor and ground
B. Source of p-MOS transistor and ground
C. Source of n-MOS transistor and source of p-MOS transistor
D. Gate of p-MOS transistor and Gate of n-MOS transistor

Answer: A

In the CMOS inverter, the output voltage is measured across the Drain of the n-MOS transistor and the ground.

26. When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, the transistors are operating in:

A. N-MOS is cutoff, P-MOS is in Saturation
B. P-MOS is cutoff, n-MOS is in Saturation
C. Both the transistors are in the linear region
D. Both the transistors are in the saturation region

Answer: D

When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, both the transistors are operating in the saturation region.

27. The switching threshold voltage VTH for an ideal inverter is equal to:

A. (VDD-VOL)/2
B. VDD
C. (VDD)/2
D. 0

Answer: C

The switching threshold voltage VTH for an ideal inverter is equal to (VDD/2).

28. The electrical equivalent component for MOS structure is:

A. Resistor
B. Capacitor
C. Inductor
D. Switch

Answer: B

The MOS structure acts as a capacitor with a metal gate and semiconductor acting as parallel plate conductors and oxide as a dielectric between them.

29. The Fermi potential is the function of:

A. Temperature
B. Doping concentration
C. Difference between Fermi level and intrinsic Fermi level
D. All of the mentioned

Answer: D

The Fermi potential, which is a function of temperature and doping, denotes the difference between the intrinsic Fermi level and the Fermi level.

30. The direction of the electric field when the gate voltage is zero:

A. Metal to semiconductor
B. Semiconductor to metal
C. No electric field exists
D. None of the mentioned

Answer: A

Metal is more positive compared to semiconductors. The electric field exists from metal to semiconductor.

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