MOS Transistor Theory MCQ Quiz – Objective Question with Answer for MOS Transistor Theory

51. Noise in VLSI circuits means:

A. Unwanted signals that arise due to vibration in the passive circuits
B. Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality
C. Signal which undergoes distortion
D. All of the mentioned

Answer: B

In VLSI circuits noise limits the minimum signal level that a circuit processes with acceptable quality.

 

52. In probability Noise is described as:

A. Random function
B. Random process
C. Deterministic function
D. Deterministic process

Answer: B

In probability, Noise is described as Random Process.

Noise is a random (more accurately stochastic) process. We consider a phenomenon random because we do not know everything about it, or simply because we do not need to know everything about it.

 

53. Noise generated by independent devices are:

A. Correlated
B. Uncorrelated
C. Equal
D. None of the mentioned

Answer: b

Noise generated by independent devices is uncorrelated, eg: noise generated from a resistor is not similar to noise generated from the transistor.

 

54. The 2 types of noise that the analog systems face during signal processing are:

A. Device electronic noise and environmental noise
B. Noise due to Vibration and electronic noise
C. Passive and active noise
D. None of the mentioned

Answer: A

Device electronic noise and environmental noise affect the signal processing of analog signals.

 

55. Thermal noise is generated from:

A. Resistor
B. Capacitor
C. Inductor
D. All of the mentioned

Answer: A

Thermal noise is due to the random motion of electrons in a conductor.

Thermal noise is, “the electronic noise generated by the thermal agitation of the electrons inside an electrical conductor at equilibrium.”

 

56. Thermal noise is generated from MOSFET by:

A. Conduction of charge carriers in the channel
B. Electric field across the gate and channel
C. Capacitance of the gate oxide
D. Substrate bias effect

Answer: A

Thermal noise is generated from MOSFET by the conduction of charge carriers in the channel.

 

57. Thermal noise current in the MOSFET is proportional to:

A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned

Answer: A

Thermal noise current in the MOSFET is proportional to Transconductance

Noise current I2 = 4kTygm.

 

58. Flicker noise is found in MOSFET at:

A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface

Answer: B

The interface between Gate oxide and silicon substrate generates flicker noise.

Flicker noise is a type of electronic noise with a 1/f power spectral density. It is therefore often referred to as 1/f noise or pink noise, though these terms have wider definitions.

 

59. Flicker noise originates due to:

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in the channel length
D. Dangling bonds

Answer: D

  • Flicker noise originates due to Dangling bonds generating flicker noise.
  • Flicker noise is a type of electronic noise with a 1/f power spectral density.
  • It is therefore often referred to as 1/f noise or pink noise, though these terms have wider definitions.

 

60. The average power of flicker noise depends on:

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel

Answer: B

Depending on the Cleanness of the oxide silicon interface flicker noise varies.

 

61. If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:

A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned

Answer: A

Logic output 1 from the first gate is considered as logic input 1 at the second gate as it lies within the range.

 

62. Input Voltage between VIH and VOH is considered as:

A. Logic Input 1
B. Logic Input 0
C. Uncertain
D. None of the mentioned

Answer: A

Input Voltage between VIH and VOH is considered as Logic Input 1.

Scroll to Top