Noise in MOS transistor MCQ Quiz – Objective Question with Answer for Noise in MOS transistor

1. Noise in VLSI circuits means:

A. Unwanted signals that arise due to vibration in the passive circuits
B. Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality
C. Signal which undergoes distortion
D. All of the mentioned

Answer: B

In VLSI circuits noise limits the minimum signal level that a circuit processes with acceptable quality.

 

2. In probability Noise is described as:

A. Random function
B. Random process
C. Deterministic function
D. Deterministic process

Answer: B

In probability, Noise is described as Random Process.

 

3. Noise generated by independent devices are:

A. Correlated
B. Uncorrelated
C. Equal
D. None of the mentioned

Answer: b

Noise generated by independent devices is uncorrelated, eg: noise generated from a resistor is not similar to noise generated from the transistor.

 

4. The 2 types of noise that the analog systems face during signal processing are:

A. Device electronic noise and environmental noise
B. Noise due to Vibration and electronic noise
C. Passive and active noise
D. None of the mentioned

Answer: A

Device electronic noise and environmental noise affect the signal processing of analog signals.

 

5. Thermal noise is generated from:

A. Resistor
B. Capacitor
C. Inductor
D. All of the mentioned

Answer: A

Thermal noise is due to the random motion of electrons in a conductor.

 

6. Thermal noise is generated from MOSFET by:

A. Conduction of charge carriers in the channel
B. Electric field across the gate and channel
C. Capacitance of the gate oxide
D. Substrate bias effect

Answer: A

Thermal noise is generated due to the conduction of charge carriers in the channel.

 

7. Thermal noise current in the MOSFET is proportional to:

A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned

Answer: A

Thermal noise current in the MOSFET is proportional to Transconductance
Noise current I2 = 4kTygm.

 

8. Flicker noise is found in MOSFET at:

A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface

Answer: B

The interface between Gate oxide and silicon substrate generates flicker noise.

 

9. Flicker noise originates due to:

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in the channel length
D. Dangling bonds

Answer: D

Flicker noise originates due to Dangling bonds generating flicker noise.

 

10. The average power of flicker noise depends on:

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel

Answer: B

Depending on the Cleanness of the oxide silicon interface flicker noise varies.

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