# Noise in MOS transistor MCQ Quiz – Objective Question with Answer for Noise in MOS transistor

1. Noise in VLSI circuits means:

A. Unwanted signals that arise due to vibration in the passive circuits
B. Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality
C. Signal which undergoes distortion
D. All of the mentioned

In VLSI circuits noise limits the minimum signal level that a circuit processes with acceptable quality.

2. In probability Noise is described as:

A. Random function
B. Random process
C. Deterministic function
D. Deterministic process

In probability, Noise is described as Random Process.

3. Noise generated by independent devices are:

A. Correlated
B. Uncorrelated
C. Equal
D. None of the mentioned

Noise generated by independent devices is uncorrelated, eg: noise generated from a resistor is not similar to noise generated from the transistor.

4. The 2 types of noise that the analog systems face during signal processing are:

A. Device electronic noise and environmental noise
B. Noise due to Vibration and electronic noise
C. Passive and active noise
D. None of the mentioned

Device electronic noise and environmental noise affect the signal processing of analog signals.

5. Thermal noise is generated from:

A. Resistor
B. Capacitor
C. Inductor
D. All of the mentioned

Thermal noise is due to the random motion of electrons in a conductor.

6. Thermal noise is generated from MOSFET by:

A. Conduction of charge carriers in the channel
B. Electric field across the gate and channel
C. Capacitance of the gate oxide
D. Substrate bias effect

Thermal noise is generated due to the conduction of charge carriers in the channel.

7. Thermal noise current in the MOSFET is proportional to:

A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned

Thermal noise current in the MOSFET is proportional to Transconductance
Noise current I2 = 4kTygm.

8. Flicker noise is found in MOSFET at:

A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface

The interface between Gate oxide and silicon substrate generates flicker noise.

9. Flicker noise originates due to:

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in the channel length
D. Dangling bonds

Flicker noise originates due to Dangling bonds generating flicker noise.

10. The average power of flicker noise depends on:

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel