Noise Margin in VLSI MCQ Quiz – Objective Question with Answer for Noise Margin in VLSI

21. Thermal noise current in the MOSFET is proportional to:

A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned

Answer: A

Thermal noise current in the MOSFET is proportional to Transconductance
Noise current I2 = 4kTygm.

 

22. Flicker noise is found in MOSFET at:

A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface

Answer: B

The interface between Gate oxide and silicon substrate generates flicker noise.

 

23. Flicker noise originates due to:

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in the channel length
D. Dangling bonds

Answer: D

Flicker noise originates due to Dangling bonds generating flicker noise.

 

24. The average power of flicker noise depends on:

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel

Answer: B

Depending on the Cleanness of the oxide silicon interface flicker noise varies.

 

25. If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:

A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned

Answer: A

Logic output 1 from the first gate is considered as logic input 1 at the second gate as it lies within the range.

 

26. Input Voltage between VIH and VOH is considered as:

A. Logic Input 1
B. Logic Input 0
C. Uncertain
D. None of the mentioned

Answer: A

Input Voltage between VIH and VOH is considered as Logic Input 1.

 

27. When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, the transistors are operating in:

A. N-MOS is cutoff, P-MOS is in Saturation
B. P-MOS is cutoff, n-MOS is in Saturation
C. Both the transistors are in the linear region
D. Both the transistors are in the saturation region

Answer: D

When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, both the transistors are operating in the saturation region.

 

28. The switching threshold voltage VTH for an ideal inverter is equal to:

A. (VDD-VOL)/2
B. VDD
C. (VDD)/2
D. 0

Answer: C

The switching threshold voltage VTH for an ideal inverter is equal to (VDD./2.

 

29. The electrical equivalent component for MOS structure is:

A. Resistor
B. Capacitor
C. Inductor
D. Switch

Answer: B

The MOS structure acts as a capacitor with a metal gate and semiconductor acting as parallel plate conductors and oxide as a dielectric between them.

 

30. The Fermi potential is the function of:

A. Temperature
B. Doping concentration
C. Difference between Fermi level and intrinsic Fermi level
D. All of the mentioned

Answer: D

The Fermi potential, which is a function of temperature and doping, denotes the difference between the intrinsic Fermi level and the Fermi level.

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