21. Thermal noise current in the MOSFET is proportional to:
A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned
22. Flicker noise is found in MOSFET at:
A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface
23. Flicker noise originates due to:
A. Conduction in channel
B. Drain to Source voltage
C. Reduction in the channel length
D. Dangling bonds
24. The average power of flicker noise depends on:
A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel
25. If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:
A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned
26. Input Voltage between VIH and VOH is considered as:
A. Logic Input 1
B. Logic Input 0
C. Uncertain
D. None of the mentioned
27. When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, the transistors are operating in:
A. N-MOS is cutoff, P-MOS is in Saturation
B. P-MOS is cutoff, n-MOS is in Saturation
C. Both the transistors are in the linear region
D. Both the transistors are in the saturation region
28. The switching threshold voltage VTH for an ideal inverter is equal to:
A. (VDD-VOL)/2
B. VDD
C. (VDD)/2
D. 0
29. The electrical equivalent component for MOS structure is:
A. Resistor
B. Capacitor
C. Inductor
D. Switch
30. The Fermi potential is the function of:
A. Temperature
B. Doping concentration
C. Difference between Fermi level and intrinsic Fermi level
D. All of the mentioned