NPN Bipolar Transistors Characteristics MCQ Quiz – Objective Question with Answer for NPN Bipolar Transistors Characteristics MCQ

21. For improved base current discharge ________ enhancement type nMOS devices have to be added.

A. two
B. three
C. one
D. four

Answer: A

For improved base current discharge, two enhancement type nMOS transistors have to be added.

22. The BJTs in the BICMOS circuit is in _____________ configuration.

A. Push-pull
B. Totem pole
C. Active high
D. Active low

Answer: B

In the BiCMOS circuit, the BJT transistors are in Totem pole configuration.

23. The MOSFETS are arranged in this configuration to provide __________

A. Zero static power dissipation
B. High Input impedance
C. Both zero static power dissipation and high input impedance
D. None of the mentioned

Answer: C

MOSFETs provide zero static power dissipation and high input impedance.

24. In latch-up condition, parasitic component gives rise to __________ conducting path.

A. low resistance
B. high resistance
C. low capacitance
D. high capacitance

Answer: A

In latch-up conditions, the parasitic component gives rise to low resistance conducting path between Vdd and Vss with disastrous results. Careful control during fabrication is necessary to avoid this problem.

25. Latch-up can be induced by __________

A. incident radiation
B. reflected radiation
C. etching
D. diffracted radiation

Answer: A

Latch-up can be induced by glitches on the supply rail or by incident radiation.

26. How many transistors might bring up a latch-up effect in the p-well structure?

A. two
B. three
C. one
D. four

Answer: A

Two transistors and two resistances might bring up the latch-up effect in the p-well structure. These are associated with p-well and with regions of the substrate.

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