Scaling of MOS Circuit in VLSI MCQ Quiz – Objective Question with Answer for Scaling of MOS Circuit in VLSI MCQ

31. Drift velocity can be given as

a) E/µ
b) µ/E
c) µ × E
d) E

Answer: c

Carrier drift velocity can be given as the product of µ and E and the maximum carrier drift velocity is approximately equal to Vsat regardless of the supply voltage.

 

32. The transit time can be given as

a) 2d
b) 2d/µE
c) µE/d
d) µE/2d

Answer: b

The transit time can be given by L/Vdrift which is equivalent to 2d/µE as L = 2d and Vdrift is µE.

 

33. Maximum transit time occurs when the size of the transistor is

a) minimum
b) maximum
c) does not depend on size
d) double

Answer: a

Maximum transit time occurs when the size of the transistor is minimum and when Va is approximately 0.

 

34. The spacing of interconnect is scaled by

a) α
b) 1/α
c) α2
d) 1/α2

Answer: b

Spacing of interconnect, width, and thickness are scaled by 1/α as they are linear dimensions.

 

35. Cross-section area is scaled by

a) α
b) 1/α
c) α2
d) 1/α2

Answer: d

The cross-section area is scaled by 1/α2 as the area is the product of length and width which are scaled by 1/α.

 

36. The decrease in device dimension ______ the die size.

a) increases
b) decreases
c) does not affect
d) decreases and then increases

Answer: a

The decrease in device dimension increases the die size and also the levels of integration.

 

37. The reduction in die size reduces

a) R
b) d
c) L
d) W

Answer: a

The reduction in die size also reduces R and C. Die size depends on both resistor and capacitor.

 

38. The propagation delay along the optical fiber interconnect can be given as

a) n/Lx
b) nL/c
c) c/nL
d) nc/L

Answer: b

The propagation delay along the optical fiber interconnect can be given as nL/c where n is the refractive index, L is the length of the fiber and c is the speed of light.

 

39. The breakdown voltage can be reduced by _____ electric field strength.

a) increasing
b) decreasing
c) does not depend
d) exponentially decreasing

Answer: a

The increase in electric field strength lowers the breakdown voltages. The electric field is inversely proportional to the voltage.

 

40. Greater the switching speed _____ is the more.

a) low
b) more
c) all of the mentioned
d) none of the mentioned

Answer: b

An increase in switching speed increases the noise problems. Switching speed is the rate a which the logic level varies.

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