51. The scaling factor of gate area in the constant voltage model is:
a) 1/α2
b) 1/β2
c) 1
d) All of the mentioned
Answer: a
The scaling factor of the gate area in the constant voltage model is 1/α2.
The gate area = L.W, therefore scaling factor = 1/α2.
There are three types of scaling constant voltage, constant field, and lateral scaling.
In constant voltage scaling, VDD is kept constant, and the process is scaled.
For constant field scaling, the device dimensions are scaled by the parameter λ.
52. The scaling factor of Gate Capacitance per unit area is:
a) 1/β
b) 1/α
c) β
d) α
Answer: c
Gate capacitance per unit area has the scaling factor of β.
Gate capacitance is the capacitance of the gate terminal of a field-effect transistor.
It can be expressed as the absolute capacitance of the gate of a transistor, as the capacitance per unit area of integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology.
53. The scaling factor of Gate capacitance is:
a) 1/β
b) 1/α
c) β/α2
d) α/β2
Answer: c
The scaling factor of Gate capacitance is β/α2.
Gate capacitance is the capacitance of the gate terminal of a field-effect transistor.
It can be expressed as the absolute capacitance of the gate of a transistor, as the capacitance per unit area of integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology.
54. In the Constant voltage model the gate capacitance is scaled by a factor of:
a) 1/β2
b) 1/α2
c) β/α2
d) α/β2
Answer: b
Gate capacitance is the capacitance of the gate terminal of a field-effect transistor.
In the Constant voltage model, the gate capacitance is scaled by a factor of 1/α2
55. The parasitic Capacitance has the scaling factor:
a) Equal to gate capacitance
b) 1/α2
c) 1/α
d) 1/β
Answer: c
Parasitic capacitance is scaled by 1/α
.
56. The carrier density in the channel in the constant voltage model is scaled as:
a) 1/β
b) 1
c) β
d) All of the mentioned
Answer: d
The carrier density in the channel in the constant voltage model is scaled as
1/β
1
β
Carrier density is scaled as 1, since in constant voltage model β = 1, therefore all are correct.
57. Carrier density is measured as:
a) Average charge per unit area in the channel in ‘OFF’ state
b) Average charge per unit area in the channel in ‘ON’state
c) Average charge per unit area in the gate oxide
d) None of the mentioned
Answer: b
Carrier density is the Average charge per unit area in the channel in the ‘ON’ state.
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers in per volume.
58. Channel resistance is scaled as:
a) 1/α2
b) 1/β
c) 1/α
d) 1
Answer: d
Channel resistance is scaled by the factor of 1.
A MOSFET’s channel resistance also produces a thermal noise current.
When there is no channel length modulation there is infinite channel resistance.
59. The scaling factor of Gate delay in the Constant field model is:
a) 1/α2
b) 1
c) 1/α
d) β/α
Answer: c
In the Constant field model, the scaling factor of gate delay is 1/α.
In constant voltage scaling, VDD is kept constant, and the process is scaled.
For constant field scaling, the device dimensions are scaled by the parameter λ.
60. The gate delay is proportional to:
a) Ron .Cg
b) Rs.Cds
c) Rd.Cgs
d) Ron.Cox
Answer: a
The gate delay is proportional to channel resistance and gate capacitance.
