1. The resistance of the uniform slab of the conducting material is?
A. Linear(proportional) with length
B. Inversely proportional to the thickness
C. Inversely proportional to the width
D. All of the mentioned
2. The sheet resistance of the conducting material is?
A. RS = resistivity/length
B. RS = resistivity/width
C. RS = resistivity/thickness
D. None of the mentioned
3. In CMOS manufacturing process Sheet resistance is used instead of resistivity because _______
A. Resistivity is the same for all doped regions
B. Resistivity and thickness are characteristics that cannot be controlled by the circuit designer, and it is expressed as the single sheet resistance parameter
C. Sheet resistance is a dimensionless quantity
D. Sheet resistance is equal to resistivity
4. Compute the sheet resistance of a 0.17 µm thick Cu wire if the resistivity of Cu wire is 1.7 µΩ-cm.
A. 0.01 Ω/square
B. 0.001 Ω/square
C. 10.0 Ω/square
D. 0.10 Ω/square
5. For semiconductors doped through diffusion or through surface peaked ion implantation we derive the sheet resistance as _____
A. Average resistivity of semiconductor/thickness
B. Resistivity/thickness
C. Conductivity/thickness
D. None of the mentioned
6. Sheet resistance of a semiconductor is _______
A. Inherent property of the material
B. Function of the thickness of the material
C. Also called Specific Resistance
D. All of the mentioned
7. Sheet resistance of semiconductor is directly measured using _______
A. Ohmmeter
B. Four-point probe measurement
C. Non-contact eddy current based testing device
D. Any of the mentioned
8. The resistance of the semiconductor material is 800Ω. The sheet resistance if the dimensions of the material is 0.125µm wide and 1 mm long is?
A. 10 Ω/square
B. 0.01 Ω/square
C. 0.10 Ω/square
D. 1 Ω/square
9. The typical values of sheet resistance for the n-well semiconductor is ____________
A. 1-5 KΩ/square
B. 10-50 KΩ/square
C. 1-5 Ω/square
D. 100-500 Ω/square
10. The typical value of sheet resistance for polysilicon semiconductors is?
A. 15-30 Ω/square
B. 150-300 Ω/square
C. 1.5-3 KΩ/square
D. 0.15-0.3 Ω/square