# VLSI Basic Circuit Concept MCQ Quiz – Objective Question with Answer for VLSI Basic Circuit Concept

1. Area A of a slab can be given as _______

A. t * W
B. t / W
C. L * W
D. L * t

Area A of a uniform slab is given as the product of thickness t and width W of the slab. Its unit is (micrometer)2.

2. For 5-micron technology, What is the Rs value for a metal?

A. 0.03
B. 0.04
C. 0.02
D. 0.01

For a 5 micron technology, the Rs value for metal is 0.03. It is the standard typical sheet resistance value.

3. For 2-micron technology, what is the Rs value for polysilicon?

A. 10-40
B. 20-50
C. 15-30
D. 15-100

For 2 micron technology, the Rs value for polysilicon is 15-30.

4. Which has higher Rs values?

A. n-diffusion
B. p-diffusion
C. n-diffusion & p-diffusion
D. none of the mentioned

The Rs values for p-diffusion are 2.5 times greater than that of the n-diffusion.

5. For 1.2-micron technology, what is the Rs value for diffusion?

A. 20-40
B. 20-45
C. 15-30
D. 25-50

For 1.2 micron technology, the Rs value for diffusion is 20-45.

6. What is the relationship between channel resistance and sheet resistance?

A. R = Rs
B. R = Z*Rs
C. R = Z/Rs
D. R = Rs/Z

The relationship between channel resistance and sheet resistance can be given as R = Z*Rs. Sheet resistance is a measure of the resistance of thin films that are nominally uniform in thickness.

7. Z can be given as the ration of ___________

A. lower channel by upper channel
B. upper channel by lower channel
C. all of the mentioned
D. none of the mentioned

Z (length to width) ratio can be given as the ratio of the upper channel to the lower channel. It is just a numerical quantity and has no unit.

8. Deposition of metal or silicon alloy can be done by _______

A. sputtering
B. evaporation
C. sputtering and evaporation
D. deposition should not be made

Deposition of metal or silicon alloy can be done by either sputtering or evaporation. Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles.

9. Deposition of metal can be done by co-evaporation.

A. true
B. false

Deposition of metal or silicon alloy can also be done by co-evaporation from the elements.

10. Processing of the device is better using ___________

A. polysilicon
B. silicides
C. polysilicon & silicides
D. none of the mentioned