VLSI Basic Circuit Concept MCQ Quiz – Objective Question with Answer for VLSI Basic Circuit Concept

1. Area A of a slab can be given as _______

A. t * W
B. t / W
C. L * W
D. L * t

Answer: A

Area A of a uniform slab is given as the product of thickness t and width W of the slab. Its unit is (micrometer)2.

 

2. For 5-micron technology, What is the Rs value for a metal?

A. 0.03
B. 0.04
C. 0.02
D. 0.01

Answer: A

For a 5 micron technology, the Rs value for metal is 0.03. It is the standard typical sheet resistance value.

 

3. For 2-micron technology, what is the Rs value for polysilicon?

A. 10-40
B. 20-50
C. 15-30
D. 15-100

Answer: C

For 2 micron technology, the Rs value for polysilicon is 15-30.

 

4. Which has higher Rs values?

A. n-diffusion
B. p-diffusion
C. n-diffusion & p-diffusion
D. none of the mentioned

Answer: B

The Rs values for p-diffusion are 2.5 times greater than that of the n-diffusion.

 

5. For 1.2-micron technology, what is the Rs value for diffusion?

A. 20-40
B. 20-45
C. 15-30
D. 25-50

Answer: B

For 1.2 micron technology, the Rs value for diffusion is 20-45.

 

6. What is the relationship between channel resistance and sheet resistance?

A. R = Rs
B. R = Z*Rs
C. R = Z/Rs
D. R = Rs/Z

Answer: B

The relationship between channel resistance and sheet resistance can be given as R = Z*Rs. Sheet resistance is a measure of the resistance of thin films that are nominally uniform in thickness.

 

7. Z can be given as the ration of ___________

A. lower channel by upper channel
B. upper channel by lower channel
C. all of the mentioned
D. none of the mentioned

Answer: B

Z (length to width) ratio can be given as the ratio of the upper channel to the lower channel. It is just a numerical quantity and has no unit.

 

8. Deposition of metal or silicon alloy can be done by _______

A. sputtering
B. evaporation
C. sputtering and evaporation
D. deposition should not be made

Answer: C

Deposition of metal or silicon alloy can be done by either sputtering or evaporation. Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles.

 

9. Deposition of metal can be done by co-evaporation.

A. true
B. false

Answer: A

Deposition of metal or silicon alloy can also be done by co-evaporation from the elements.

 

10. Processing of the device is better using ___________

A. polysilicon
B. silicides
C. polysilicon & silicides
D. none of the mentioned

Answer: A

Processing of the device is better using polysilicon than silicides even though the properties of silicides are better than polysilicon.

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