Area A of a uniform slab is given as the product of thickness t and width W of the slab. Its unit is (micrometer)2.
2. For 5-micron technology, What is the Rs value for a metal?
A. 0.03
B. 0.04
C. 0.02
D. 0.01
Answer: A
For a 5 micron technology, the Rs value for metal is 0.03. It is the standard typical sheet resistance value.
3. For 2-micron technology, what is the Rs value for polysilicon?
A. 10-40
B. 20-50
C. 15-30
D. 15-100
Answer: C
For 2 micron technology, the Rs value for polysilicon is 15-30.
4. Which has higher Rs values?
A. n-diffusion
B. p-diffusion
C. n-diffusion & p-diffusion
D. none of the mentioned
Answer: B
The Rs values for p-diffusion are 2.5 times greater than that of the n-diffusion.
5. For 1.2-micron technology, what is the Rs value for diffusion?
A. 20-40
B. 20-45
C. 15-30
D. 25-50
Answer: B
For 1.2 micron technology, the Rs value for diffusion is 20-45.
6. What is the relationship between channel resistance and sheet resistance?
A. R = Rs
B. R = Z×Rs
C. R = Z/Rs
D. R = Rs/Z
Answer: B
The relationship between channel resistance and sheet resistance can be given as R = Z×Rs. Sheet resistance is a measure of the resistance of thin films that are nominally uniform in thickness.
7. Z can be given as the ration of ___________
A. lower channel by upper channel
B. upper channel by lower channel
C. all of the mentioned
D. none of the mentioned
Answer: B
Z (length to width) ratio can be given as the ratio of the upper channel to the lower channel. It is just a numerical quantity and has no unit.
8. Deposition of metal or silicon alloy can be done by _______
A. sputtering
B. evaporation
C. sputtering and evaporation
D. deposition should not be made
Answer: C
Deposition of metal or silicon alloy can be done by either sputtering or evaporation. Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles.
9. Deposition of metal can be done by co-evaporation.
A. true
B. false
Answer: A
Deposition of metal or silicon alloy can also be done by co-evaporation from the elements.
10. Processing of the device is better using ___________
A. polysilicon
B. silicides
C. polysilicon & silicides
D. none of the mentioned
Answer: A
Processing of the device is better using polysilicon than silicides even though the properties of silicides are better than polysilicon.