81. The typical value of sheet resistance for polysilicon semiconductors is?
A. 15-30 Ω/square
B. 150-300 Ω/square
C. 1.5-3 KΩ/square
D. 0.15-0.3 Ω/square
82. For λ based design, what is the standard unit of capacitance, (λ = 5µm)?
A. 0.01pF
B. 0.0032pF
C. 0.0023pF
D. All of the mentioned
83. If the standard area is 2λ × 2λ, then the standard capacitance of a gate of length 30λ and width 6λ is?
A. 180oCg
B. 45oCg
C. 90oCg
D. 4oCg
84. Which of the following mainly constitutes the output node capacitance?
A. Inter electrode capacitance
B. Stray capacitance
C. Junction Parasitic capacitance
D. All of the mentioned
85. The junction parasitic capacitance are produced due to ____________
A. Source diffusion regions
B. Gate diffusion regions
C. Drain diffusion region
D. All of the mentioned
86. The amount of parasitic capacitance at the output node is determined by __________
A. Concentration of the impurity-doped
B. Size of the total drain diffusion area
C. Charges stored in the capacitor
D. None of the mentioned
87. The dominant component of the total output capacitance in submicron technology is?
A. Drain diffusion capacitance
B. Gate oxide capacitance
C. Interconnect capacitance
D. Junction parasitic capacitance
88. Which of the following is the dominant component in input capacitance?
A. Gate diffusion capacitance
B. Gate parasitic capacitance
C. Gate oxide capacitance
D. All of the mentioned
89. The total load capacitance is calculated as the sum of __________
A. Drain capacitance in series with input capacitance
B. Drain capacitance + interconnect capacitance +input capacitance
C. Drain capacitance + interconnect capacitance – input capacitance
D. Drain capacitance in parallel with input capacitance
90. The interconnect capacitance is formed by __________
A. Area between the interconnect lines
B. Interconnect lines between the gates
C. Inter electrode capacitance of interconnect lines
D. None of the mentioned