A. low-temperature stable gate
B. low-temperature stable drain
C. high-temperature stable gate
D. high-temperature stable drain
Answer: C
The anneal cycle requires a stable temperature of 850 degrees Celcius to activate the dopants it is necessary to choose a high-temperature stable gate.
32. The voltage swing for Schottky barrier gate should be
A. low
B. high
C. very high
D. very low
Answer: A
Schottky barrier gates on GaAs cannot be forward biased above 0.7 to 0.8 volt, the permissible voltage swing should be relatively low.
33. The E-MESFET is defined by the intersection of
A. red and yellow masks
B. green and red masks
C. brown and red masks
D. green and yellow masks
Answer: B
E-MESFET is defined by the intersection of green and red masks and D-MESFET is defined by the intersection of green, red, and yellow masks.
34. E-JFET technology has
A. low voltage swing
B. high current swing
C. high power requirements
D. high voltage swing
Answer: D
E-JFET technology for ultra-high-speed VLSI has reduced power requirements with larger logic voltage swings.
35. In a CE-JFET, the ratio of electron mobility to hole mobility is equal to
A. 4
B. 10
C. 5
D. 20
Answer: B
In a CE-JFET, the ratio of effective channel electron mobility of the n-channel device to hole mobility of the p-channel device is equal to 10.
36. Equal number of p and n devices in a device will consume
A. small area
B. large area
C. all of the mentioned
D. none of the mentioned
Answer: B
The circuits requiring equal numbers of p and n devices will consume large areas. Thus one must use other design methods such as precharge techniques.
37. In high electron mobility transistor, the electrons are
A. far apart
B. high mobility
C. nearby and low mobility
D. far apart and high mobility
Answer: B
The electrons in high electron mobility transistors are spatially separated from ionized donors and they exhibit high mobility.
