1. The basic figures of merit for MOS devices are

a) Minimum Feature size

b) Low Power dissipation

c) Maximum operational frequency

d) All of the mentioned

2. For the constant field model, the scaling factors β and α are related as:

a) β = α

b) α = 2β

c) β = 1

d) β = α = 0

3. In Constant Voltage model, the scaling factors β and α are related as:

a) β = α

b) α = 2β

c) β = 1

d) β = α = 1

4. The scaling factor for the supply voltage VDD is:

a) 1

b) 0

c) 1/α

d) 1/β

5. The scaling factor of the length and width of the channel is:

a) 1, 1

b) 1/α, 1/β

c) 1/α, 1/α

d) 1/β, 1/β

6. The third type of scaling model is:

a) λ-based model

b) µm based model

c) combined voltage and dimension model

d) combined voltage and electric field model

7. The scaling factor of gate area in the constant voltage model is:

a) 1/α^{2}

b) 1/β2

c) 1

d) All of the mentioned

8. The scaling factor of Gate Capacitance per unit area is:

a) 1/β

b) 1/α

c) β

d) α

9. The scaling factor of Gate capacitance is:

a) 1/β

b) 1/α

c) β/α^{2}

d) α/β^{2}

10. In the Constant voltage model the gate capacitance is scaled by a factor of:

a) 1/β2

b) 1/α^{2}

c) β/α2

d) α/β2