11. The parasitic Capacitance has the scaling factor:
a) Equal to gate capacitance
b) 1/α2
c) 1/α
d) 1/β
12. The carrier density in the channel in the constant voltage model is scaled as:
a) 1/β
b) 1
c) β
d) All of the mentioned
13. Carrier density is measured as:
a) Average charge per unit area in the channel in ‘OFF’ state
b) Average charge per unit area in the channel in ‘ON’state
c) Average charge per unit area in the gate oxide
d) None of the mentioned
14. Channel resistance is scaled as:
a) 1/α2
b) 1/β
c) 1/α
d) 1
15. The scaling factor of Gate delay in the Constant field model is:
a) 1/α2
b) 1
c) 1/α
d) β/α
16. The gate delay is proportional to:
a) Ron .Cg
b) Rs.Cds
c) Rd.Cgs
d) Ron.Cox
17. The maximum operating frequency is scaled by:
a) 1/α2
b) β/α2
c) α2/β
d) 1
18. The saturation current is scaled by the factor of:
a) 1
b) 1/α2
c) 1/β
d) 1/α
19. The scaling factor of current density in the constant voltage model is:
a) 1/α2
b) 1
c) α2
d) α2/β
20. Switching energy per gate is scaled by the factor of:
a) 1
b) α2/β
c) 1/ β.α2
d) α2