# VLSI Wiring Capacitance MCQ Quiz – Objective Question with Answer for VLSI Wiring Capacitance

1. Which contributes to the wiring capacitance?

A. fringing fields
B. interlayer capacitance
C. peripheral capacitance
D. all of the mentioned

The sources of capacitance that contribute to the total wiring capacitance are fringing field capacitance, interlayer capacitance, and peripheral capacitance.

2. What does the value d in fringing field capacitance measure?

A. thickness of wire
B. length of the wire
C. wire to substrate separation
D. wire to wire separation

The quantity d in fringing field capacitance measures the wire to substrate separation. It is the distance between the wire and the substrate used in the device.

3. Total wire capacitance is equal to ___________

A. area capacitance
B. fringing field capacitance
C. area capacitance + fringing field capacitance
D. peripheral capacitance

Total wire capacitance can be given as the sum of area capacitance and fringing field capacitance.

4. Interlayer capacitance occurs due to ___________

A. separation between plates
B. electric field between plates
C. charges between plates
D. parallel plate effect

Interlayer capacitance occurs due to a parallel plate effect between one layer and another. When one capacitance value comes closer to another they create some combined effects.

5. Which capacitance must be higher?

A. metal to polysilicon capacitance
B. metal to substrate capacitance
C. metal to metal capacitance
D. diffusion capacitance

Metal to polysilicon capacitance should be higher than metal to substrate capacitance. This is that when one layer underlies the other and in consequence, interlayer capacitance is highly dependent on layout.

6. Peripheral capacitance is given in _________ per unit length.

Peripheral capacitance is given in picofarads per unit length. This is the sidewall capacitance. Each diode has this sidewall capacitance.

7. For greater relative value of peripheral capacitance ___________ should be small.

A. source area
B. drain area
C. source & drain area
D. none of the mentioned

The smaller the source or drain area, the greater the relative value of peripheral capacitance as they are both inversely related.

8. Diffusion capacitance is equal to ___________

A. area capacitance
B. peripheral capacitance
C. fringing field capacitance
D. area capacitance + peripheral capacitance

Diffusion capacitance is given by the sum of area capacitance and peripheral capacitance.

9. Polysilicon is suitable for ___________

A. small distance
B. large distance
C. all of the mentioned’
D. none of the mentioned

Polysilicon is unsuitable for routing Vdd or Vss other than for a very small distance because of the relatively high Rs value of the polysilicon layer.

10. Which has a high voltage drop?

A. metal layer
B. polysilicon layer
C. diffusion layer
D. silicide layer