41. CMOS technology is used in developing which of the following?
A. microprocessors
B. microcontrollers
C. digital logic circuits
D. all of the mentioned
Answer: D
CMOS technology is used in developing microcontrollers, microprocessors, digital logic circuits and other integrated circuits.
42. CMOS technology is used in developing which of the following?
A. microprocessors
B. microcontrollers
C. digital logic circuits
D. all of the mentioned
Answer: D
CMOS technology is used in developing microcontrollers, microprocessors, digital logic circuits and other integrated circuits.
43. CMOS has __________
A. high noise margin
B. high packing density
C. high power dissipation
D. high complexity
Answer: B
Some of the properties of CMOS are that it has low power dissipation, high packing density and low noise margin.
44. In CMOS fabrication, nMOS and pMOS are integrated in the same substrate.
A. true
B. false
Answer: A
In CMOS fabrication, nMOS and pMOS are integrated in the same chip substrate. n-type and p-type devices are formed in the same structure.
45. P-well is created on __________
A. p substrate
B. n substrate
C. p & n substrate
D. none of the mentioned
Answer: B
P-well is created on n substrate to accommodate n-type devices whereas p-type devices are formed in the N-type substrate.
46. Oxidation process is carried out using __________
A. hydrogen
B. low purity oxygen
C. sulfur
D. nitrogen
Answer: A
The oxidation process is carried out using high purity oxygen and hydrogen. Oxidation is the process of oxidizing or being oxidized.
47. Photoresist layer is formed using __________
A. high sensitive polymer
B. light-sensitive polymer
C. polysilicon
D. silicon dioxide
Answer: B
Light-sensitive polymer is used to form the photoresist layer. The photoresist is a light-sensitive material used to form a patterned coating on a surface.
48. In CMOS fabrication, the photoresist layer is exposed to __________
A. visible light
B. ultraviolet light
C. infrared light
D. fluorescent
Answer: B
The photoresist layer is exposed to ultraviolet light to mark the regions where diffusion is to take place.
49. Few parts of photoresist layer is removed by using __________
A. acidic solution
B. neutral solution
C. pure water
D. diluted water
Answer: A
Few parts of the photoresist layer is removed by treating the wafer with a basic or acidic solution. Acidic solutions are those which have a pH less than 7 and basic solutions have greater than 7.
50. P-well doping concentration and depth will affect the __________
A. threshold voltage
B. Vss
C. Vdd
D. Vgs
Answer: A
Diffusion should be carried out very carefully, as doping concentration and depth will affect both threshold voltage and breakdown voltage.
