Scaling of MOS Circuit in VLSI MCQ Quiz – Objective Question with Answer for Scaling of MOS Circuit in VLSI MCQ

61. The maximum operating frequency is scaled by:

a) 1/α2
b) β/α2
c) α2
d) 1

Answer: c

Maximum operating frequency s inversely proportional to the gate delay. It is scaled by α2

 

62. The saturation current is scaled by the factor of:

a) 1
b) 1/α2
c) 1/β
d) 1/α

Answer: c

The saturation current is scaled by the factor of 1/β

Saturation current is the limiting current through an ionized gas or an electron tube such that further increase of voltage produces no further increase in current.

 

63. The scaling factor of current density in the constant voltage model is:

a) 1/α2
b) 1
c) α2
d) α2/β

Answer: c

Current density is scaled by a factor of α2/β and since it is in the Constant voltage model, β = 1,

Therefore the scaling factor of current density in the constant voltage model is α2

 

64. Switching energy per gate is scaled by the factor of:

a) 1
b) α2/β
c) 1/ β.α2
d) α2

Answer: c

  • Switching energy per gate is scaled by a factor of 1/ β.α2.
  • The switching Activity Factor (A) of a circuit node is the probability the given node will change its state from 1 to 0 or vice versa at a given clock tick.
  • The activity factor is a function of the circuit topology and the activity of the input signals.

 

65. In the Constant field model, the scaling factor of switching energy per gate would be:

a) 1/ β.α2
b) 1/ α3
c) 1/ α2
d) All of the mentioned

Answer: b

In the Constant field model, the scaling factor of switching energy per gate would be 1/ α3

 

66. The power dissipation per gate is scaled as:

a) 1
b) 1/ β.α2
c) α2/β
d) 1/ β2

Answer: d

  • Every gate will require some amount of power. It must. dissipate this power in the form of heat.
  • Power dissipation per gate is scaled by the factor of 1/β2
  • Power dissipation is the maximum power that the MOSFET can dissipate continuously under specified thermal conditions.

 

67. The dynamic component of power dissipation is given by:

a) P = I2.Rd
b) P = Vdd2/Rd
c) P = Eg.fo
d) All of the mentioned

Answer: c

The dynamic component is the product of energy per gate and maximum operating frequency. It is given as

P = Eg.fo

 

68. The static component of power dissipation is given by:

a) P = I2.Rd
b) P = Vdd2/Ron
c) P = Eg.fo
d) All of the mentioned

Answer: b

The static component is the power dissipated across the transistor when it is in the ON state. It is given as

P = Vdd2/Ron

 

69. The scaling factor of power dissipation per unit area is:

a) 1
b) 1/α2
c) 1/ β.α2
d) α22

Answer: d

  • The scaling factor of power dissipation per unit area is α22.
  • Constant field scaling reduces both the drain voltage and the drain current by a factor of S.
  • Therefore, the power dissipation of the transistor decreases by a factor of S2, while it increases by the factor S in constant voltage scaling.

 

70. The power speed product has the scaling factor of:

a) 1
b) 1/α2
c) 1/ β.α2
d) None of the mentioned

Answer: c

Speed-power product is defined as the product of propagation delay time in ns and power dissipation in mW.

The power-speed product has the scaling factor of 1/ β.α2

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