VLSI Basic Circuit Concept MCQ Quiz – Objective Question with Answer for VLSI Basic Circuit Concept

91. The amount of gate oxide capacitance is determined by __________

A. Charges present on the gate
B. Polarity of the gate
C. Charges present on the substrate
D. Area of the gate

92. By what amount is Sidewall doping larger than substrate doping concentration.

A. 5
B. 2
C. 1
D. 10

93. Zero bias depletion capacitance per unit length at sidewall junctions is given by, (Cj is the zero bias depletion capacitance per unit area.

A. (√10).Cj.xj
B. (√5).Cj.xj
C. (√10).Cj.xj2
D. (√10).Cj.xj3

94. The typical value of capacitance in pF × 10^-4/µm² for the gate to channel in λ based design is?

A. 1
B. 0.4
C. 0.2
D. 4

95. The active capacitance is also called as __________

A. Parasitic capacitance
B. Interconnect capacitance
C. Junction capacitance
D. Diffusion capacitance

96. The value of diffusion capacitance in pF × 10^-4/µm² in 2 µm design is?

A. 1.75
B. 4
C. 8
D. 16

97. The value of a standard unit of capacitance is?

A. 0.01pF
B. 0.0032pF
C. 0.0023pF
D. All of the mentioned

98. The standard unit of capacitance is defined as?

A. Capacitance of gate to channel of MOS transistor having W = L dimensions
B. Capacitance of gate to channel of n-MOS transistor having W = 3L dimensions
C. Capacitance of gate to channel of p-MOS transistor having 3W = L dimensions
D. Capacitance of gate to channel of n-MOS transistor having W = L dimensions and p-MOS having W=3L dimensions

99. The capacitances in MOSFET occurs due to _____________

A. Interconnects
B. Difference in Doping concentration
C. Difference in dopant materials
D. All of the mentioned

100. The parasitic capacitances found in MOSFET are ___________

A. Oxide related capacitances
B. Inter electrode capacitance
C. Electrolytic capacitance
D. All of the mentioned