71. During the calculation of load capacitance of a 1st stage CMOS inverter, the input node capacitances, Cgs, n, and Cgs, p of the 2nd stage CMOS inverter are also considered.
A. True
B. False
72. The resistance of the uniform slab of the conducting material is?
A. Linear(proportional) with length
B. Inversely proportional to the thickness
C. Inversely proportional to the width
D. All of the mentioned
73. The sheet resistance of the conducting material is?
A. RS = resistivity/length
B. RS = resistivity/width
C. RS = resistivity/thickness
D. None of the mentioned
74. In CMOS manufacturing process Sheet resistance is used instead of resistivity because _______________
A. Resistivity is the same for all doped regions
B. Resistivity and thickness are characteristics that cannot be controlled by the circuit designer, and it is expressed as the single sheet resistance parameter
C. Sheet resistance is a dimensionless quantity
D. Sheet resistance is equal to resistivity
75. Compute the sheet resistance of a 0.17 µm thick Cu wire if the resistivity of Cu wire is 1.7 µΩ-cm.
A. 0.01 Ω/square
B. 0.001 Ω/square
C. 10.0 Ω/square
D. 0.10 Ω/square
76. For semiconductors doped through diffusion or through surface peaked ion implantation we derive the sheet resistance as ___________
A. Average resistivity of semiconductor/thickness
B. Resistivity/thickness
C. Conductivity/thickness
D. None of the mentioned
77. Sheet resistance of a semiconductor is ___________
A. Inherent property of the material
B. Function of the thickness of the material
C. Also called Specific Resistance
D. All of the mentioned
78. Sheet resistance of semiconductor is directly measured using ___________
A. Ohmmeter
B. Four-point probe measurement
C. Non-contact eddy current based testing device
D. Any of the mentioned
79. The resistance of the semiconductor material is 800Ω. The sheet resistance if the dimensions of the material is 0.125µm wide and 1 mm long is?
A. 10 Ω/square
B. 0.01 Ω/square
C. 0.10 Ω/square
D. 1 Ω/square
80. The typical values of sheet resistance for the n-well semiconductor is ____________
A. 1-5 KΩ/square
B. 10-50 KΩ/square
C. 1-5 Ω/square
D. 100-500 Ω/square