61. Interlayer capacitance occurs due to ___________
A. separation between plates
B. electric field between plates
C. charges between plates
D. parallel plate effect
62. Which capacitance must be higher?
A. metal to polysilicon capacitance
B. metal to substrate capacitance
C. metal to metal capacitance
D. diffusion capacitance
63. Peripheral capacitance is given in _________ per unit length.
A. nano farad
B. picofarad
C. microfarad
D. farad
64. For greater relative value of peripheral capacitance ___________ should be small.
A. source area
B. drain area
C. source & drain area
D. none of the mentioned
65. Diffusion capacitance is equal to ___________
A. area capacitance
B. peripheral capacitance
C. fringing field capacitance
D. area capacitance + peripheral capacitance
66. Polysilicon is suitable for ___________
A. small distance
B. large distance
C. all of the mentioned’
D. none of the mentioned
67. Which has a high voltage drop?
A. metal layer
B. polysilicon layer
C. diffusion layer
D. silicide layer
68. Which layer has a high capacitance value?
A. metal
B. diffusion
C. silicide
D. polysilicon
69. Which layer has high resistance value?
A. polysilicon
B. silicide
C. diffusion
D. metal
70. While measuring the output load capacitance Cgs, n and Cgs, p is not considered. Why?
A. Because Cgs, n and Cgs, p are the capacitances at the input nodes
B. Because Cgs, n and Cgs, p does not exist during the operation of CMOS inverter
C. Because Cgs, n and Cgs, p are storing opposite charges and cancel out each other during the calculation of load capacitance
D. None of the mentioned