VLSI Technology Development MCQ Quiz – Objective Question with Answer for Technology Development in VLSI

1. The GaAs fabrication has _________ gate geometry.

A. less than one micron
B. less than two micron
C. more than one micron
D. more than two micron

Answer: A

The GaAs fabrication has characteristics such as having less than on-micron gate geometry and less than two-micron metal pitch.


2. The GaAs structure has upto _______ metal.

A. two-layer
B. three-layer
C. four-layer
D. one-layer

Answer: C

The GaAs fabrication has the feature of having four-layer metal and a four-inch diameter wafer.


3. Electron mobility of gallium arsenide is _______ that of silicon.

A. greater than
B. lesser than
C. same as
D. does not depend on

Answer: A

Electron mobility of gallium arsenide is six to seven times that of silicon resulting in very fast electron transit times.


4. Saturated drift velocity of gallium is _______ to that of silicon.

A. greater
B. lesser
C. approximately same
D. does not depend on

Answer: C

The saturated drift velocity of gallium and silicon is approximately equal. For GaAs, saturation velocity occurs at a lower threshold field than for silicon.


5. Larger energy bandgap _____ parasitic capacitances.

A. increases
B. decreases
C. maintains constant
D. does not affect

Answer: B

A large energy bandgap offers a bulk semi-insulating substrate and minimizes parasitic capacitances and allows easy electrical isolation.


6. In gallium arsenide, radiation resistance is

A. stronger
B. weaker
C. absent
D. very weak

Answer: A

In gallium arsenide radiation resistance is stronger due to the absence of gate oxide to trap charges.


7. In gallium arsenide, a wider operating temperature range is possible.

A. true
B. false

Answer: A

In gallium arsenide, a wider operating temperature range is possible due to the larger bandgap. GaAs devices are tolerant to wide temperature variations.


8. _______ can be used as light emitters.

A. forward-biased PN junction
B. reverse-biased PN junction
C. forward-biased PNP junction
D. reverse-biased PNP junction

Answer: A

The direct bandgap of GaAs allows efficient radiative recombination of electrons and holes and thus forward-biased PN junction can be used as light emitters.


9. In GaAs __________ has more intrinsic mobility.

A. electron
B. holes
C. proton
D. neutron

Answer: A

In GaAs, electrons have intrinsic mobility of 8000 cm2/V.sec whereas silicon holes have more intrinsic mobility as 500 cm2/V.sec.


10. Which has greater intrinsic resistivity?

A. silicon
B. gallium arsenide
C. gallium
D. silicon and gallium

Answer: B

Gallium arsenide has greater intrinsic resistivity of 1 × 108 ohms. cm whereas silicon has intrinsic resistivity of 2.2×105 ohm. cm.

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