1. The BiCMOS are preferred over CMOS due to ______________
A. Switching speed is more compared to CMOS
B. Sensitivity is less with respect to the load capacitance
C. High current drive capability
D. All of the mentioned
2. The transistors used in BiCMOS are __________
A. BJT
B. MOSFET
C. Both BJT and MOSFETs
D. JFET
3. The high current driving capability of the BiCMOS is due to __________
A. NMOS in saturation mode
B. PMOS in saturation mode
C. CMOS
D. BJT
4. In BiCMOS inverter, the BJT used are __________
A. Only Npn BJT
B. Only Pnp BJT
C. Both NPN and PNP BJT
D. Multi emitter npn BJT
5. Which of the following is the drawback of the BiCMOS circuits?
A. Sensitivity is less load capacitance
B. Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C. Increased fabrication Complexity
D. All of the mentioned
6. The Bipolar Transistor is fabricated on __________
A. Same substrate of nMOS
B. N-well in p Substrate
C. P-well in n Substrate
D. Same substrate of pMOS
7. The n-well created for Bipolar Transistor in BiCMOS is used as __________
A. Substrate
B. Collector
C. Emitter
D. None of the mentioned
8. The n-well collector is formed by __________
A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate
9. The collector contact region is doped with higher concentration of n-type impurities due to __________
A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between the collector region and contact
C. It reduces contact resistance
D. It can withstand high voltages as compared to the collector region
10. What is the work of BJT in BiCMOS?
A. Current controlled Voltage source
B. Voltage controlled Current source
C. Current controlled current source
D. Voltage controlled current source