FET Logic Inverter MCQ Quiz – Objective Question with Answer for FET Logic Inverter

11. The ratio of Zp.u./Zp.d. for E-MESFET is

A. 1/10
B. 10/1
C. 4/1
D. 1/4

Answer: B

For E-MESFET, the Zp.u./Zp.d. ratio is 10/1. For MESFET with Lp.u.=Lp.d., Wp.u./Wp.d. is equal to 1/10.

 

12. In direct coupled logic, the input transistor base is connected to

A. base output
B. emitter output
C. collector output
D. ground

Answer: C

In directly coupled logic, the input transistor base is directly connected to the collector output without any base resistors.

 

13. Direct-coupled logic is easy to design.

A. true
B. false

Answer: A

Direct-coupled logic devices have fewer components, are economical, and are simpler to design and fabricate.

 

14. For cascade inverters, the relation suitable is

A. Vin = Vout > Vinv
B. Vin = Vout = Vinv
C. Vin < Vout > Vinv
D. Vin > Vout = Vinv

Answer: B

For cascade inverters without degradation of levels, the relation suitable and required is Vin = Vout = Vinv.

 

15. MESFET circuits are formed on _____ layers.

A. two
B. three
C. four
D. five

Answer: A

MESFET circuits are formed effectively on two layers – the green implant layer and the red gate-metal layer.

 

16. If the gate-metal layer is in contact with the implant layer _____ is formed.

A. diode
B. transistor
C. switch
D. buffer

Answer: B

If the gate-metal layer is in contact with the implant layer a transistor is formed. The implanted layer and the gate-metal layer interact to form the Schottky gate where they cross one another.

 

17. When an insulating layer is used in between the implant and gate metal, it is used as

A. amplifier
B. transistor
C. switch
D. interconnect

Answer: D

If an insulating layer is introduced in between the implant and gate metal, there is no interaction between these layers and it can be used as interconnect.

 

18. The MESFET properties can be varied by varying the

A. implant
B. implant concentration
C. structure
D. length

Answer: B

The basic properties of MESFET can be modified by varying the implant concentration density.

 

19. Complexity in MESFET design can be reduced by using

A. layout design
B. stick diagram
C. symbolic representation
D. transistor diagram

Answer: C

Through color encoding and symbolic representation of layers, it is possible to remove much of the complexity associated with the design of MESFET.

 

20. _______ color is used to represent interconnections.

A. red
B. green
C. yellow
D. brown

Answer: A

Red (gate-metal) is used to represent the Schottky gate and short interconnections.

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