21. Sheet resistance of semiconductor is directly measured using ___________
A. Ohmmeter
B. Four-point probe measurement
C. Non-contact eddy current based testing device
D. Any of the mentioned
22. The resistance of the semiconductor material is 800Ω. The sheet resistance if the dimensions of the material is 0.125µm wide and 1 mm long is?
A. 10 Ω/square
B. 0.01 Ω/square
C. 0.10 Ω/square
D. 1 Ω/square
23. The typical values of sheet resistance for the n-well semiconductor is ________
A. 1-5 KΩ/square
B. 10-50 KΩ/square
C. 1-5 Ω/square
D. 100-500 Ω/square
24. The typical values of sheet resistance for polysilicon semiconductors is?
A. 15-30 Ω/square
B. 150-300 Ω/square
C. 1.5-3 KΩ/square
D. 0.15-0.3 Ω/square
25. For λ based design, what is the standard unit of capacitance, (λ=5µm)?
A. 0.01pF
B. 0.0032pF
C. 0.0023pF
D. All of the mentioned
26. If the standard area is 2λ × 2λ, then the standard capacitance of a gate of length 30λ and width 6λ is?
A. 180oCg
B. 45oCg
C. 90oCg
D. 4oCg
27. Which of the following mainly constitutes the output node capacitance?
A. Inter electrode capacitance
B. Stray capacitance
C. Junction Parasitic capacitance
D. All of the mentioned
28. The junction parasitic capacitance are produced due to ____________
A. Source diffusion regions
B. Gate diffusion regions
C. Drain diffusion region
D. All of the mentioned
29. The amount of parasitic capacitance at the output node is determined by __________
A. Concentration of the impurity-doped
B. Size of the total drain diffusion area
C. Charges stored in the capacitor
D. None of the mentioned
30. The dominant component of the total output capacitance in submicron technology is?
A. Drain diffusion capacitance
B. Gate oxide capacitance
C. Interconnect capacitance
D. Junction parasitic capacitance